hamamatsu S3204-08 Large photosensitive area Si PIN photodiodes

Features – Sensitivity matching with BGO and CsI(TI) scintillators – Low capacitance – High-speed response – High stability – Good energy resolution Specifications Photosensitive area 18 × 18 mm Package Ceramic Package category — Cooling Non-cooled Reverse voltage (max.) 100 V Spectral response range 340 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.66 A/W Dark current (max.) 20000 pA Cutoff frequency (typ.) 20 MHz Terminal capacitance (typ.) 130 pF Noise equivalent power (typ.) 6.6×10-14 W/Hz1/2 Measurement condition Ta=25 ℃, Typ., unless otherwise noted, Photosensitivity: λ=λp, Dark current: VR=70 V, Cutoff frequency: VR=70 V, Terminal capacitance: VR=70 V, f=1 MHz, Noise equivalent power: VR=70 V hamamatsu S3204-08 Large photosensitive area Si PIN photodiodes