hamamatsu S3584-08 Large photosensitive area Si PIN photodiodes

Features – Sensitivity matching with BGO and CsI(TI) scintillators – Low capacitance – High-speed response – High stability – Good energy resolution Specifications Photosensitive area 28 × 28 mm Package Ceramic Package category — Cooling Non-cooled Reverse voltage (max.) 100 V Spectral response range 340 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.66 A/W Dark current (max.) 30000 pA Cutoff frequency (typ.) 10 MHz Terminal capacitance (typ.) 300 pF Noise equivalent power (typ.) 8.6×10-14 W/Hz1/2 Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=λp, Dark current: VR=70 V, Cutoff frequency: VR=70 V, Terminal capacitance: VR=70 V, f=1 MHz, Noise equivalent power: VR=70 V, unless otherwise noted hamamatsu S3584-08 Large photosensitive area Si PIN photodiodes