AHST8108 is the world's leading Wi-Fi HaLow™ LGA solder down module The AHST8108 allows building long-range, ultra-low power Wi-Fi networks in sub 1 GHz license-exempt bands, utilizing compact form factor. The AHST8108 data rate up to 43.3 Mbps at 8 MHz bandwidth with the high-speed data rate, it enables connectivity for many IoT applications, including sensors, weather stations, industrial monitoring, medical patient monitoring, agriculture monitoring, surveillance camera. Key Features Morse Micro MM8108 HaLow chipset Up to 43.3Mbps data rate IPEX (MHF1) antenna connector USB and SDIO for host interface Compact solder down module Specifications Chipset Morse Micro MM8108 Frequency 915 MHz (US) 868 MHz (EU) 850/924 MHz (JP) 920 MHz (TW) Modulation OFDM with BPSK, QPSK, 16QAM, 64QAM, 256QAM Max. Data rate Up to 43.3 Mbps @ 8 MHz bandwidth (Max. Phy rate) Channel bandwidth 1/2/4/8 MHz (US) 1 MHz (EU) 1/2/4 MHz (JP) 1/2/4/MHz (TW) Antenna connector 1x IPEX (MHF1) antenna connector Host interface USB, SDIO, SPI Form factor LGA solder down module Dimensions 13.50 x 18.60 mm Operating temperature -40°C to 85°C (-40°F to 185°F) Software & SDK https://github.com/MorseMicro Board configuration file (BCF) Linux based: bcf_aw_hm677.bin mm8108b2-rl.bin STM32 based: bcf_boardtype_0a02.mbin Supports worldwide bands from 850MHz to 950MHz AHST8108 (US) AHST8108 (EU) AHST8108 (JP) AHST8108 (TW) 902 MHz – 928 MHz 863 MHz – 868 MHz 920.5 – 927.5 MHz 920 .5 – 924.5 MHz 26 MHz 5 MHz 7 MHz 4 MHz Pin Definition - Pin Map Pin Definition - Pin Description Pin No. Definition Description Voltage Type 1 GND1 GROUND GND 2 MM_RSTN Asynchronous chip reset (active low) I 3 MM_WAKE External input wake from Deep Sleep and Snooze modes I 4 MM_TMS JTAG mode select I 5 MM_TCK JTAG clock I 6 MM_TDO JTAG data out O 7 GND2 GROUND GND 8 MM_TDI JTAG data in I 9 VBAT 3.3V VBAT supply 3.3V Power 10 MM_SD0 SDIO Data 0 / SPI_MISO I/O 11 MM_SD3 SDIO Data 3 / SPI_CS I/O 12 MM_SD1 SDIO Data 1 / SPI_INT I/O 13 MM_SD2 SDIO Data 2 I/O 14 MM_SD_CMD SDIO Command / SPI_MOSI I/O 15 MM_SD_CLK SDIO Clock / SPI_SCK I 16 GPIO5 Programmable digital I/O I/O 17 GPIO4 Programmable digital I/O I/O 18 GND3 GROUND GND 19 GPIO3 Programmable digital I/O I/O 20 VDDIO VDD supply for digital I/O 3.3V Power 21 GND4 GROUND GND 22 VBAT_TX 3.3 V VBAT_TX Supply 3.3V Power 23 VDD_USB USB 3.3V supply 3.3V Power 24 GND5 GROUND GND 25 USB_DM USB DM line I/O 26 USB_DP USB DP line I/O 27 GPIO2 Programmable digital I/O I/O 28 GND6 GROUND GND 29 GPIO1 Programmable digital I/O I/O 30 GPIO0 Programmable digital I/O I/O 31 GPIO6 Programmable digital I/O I/O 32 GPIO7 Programmable digital I/O I/O 33 GPIO8 Programmable digital I/O I/O 34 GPIO9 Programmable digital I/O I/O 35 GPIO10 Programmable digital I/O I/O 36 GND7 GROUND GND 37 GND8 GROUND GND 38 GND9 GROUND GND RF Specifications & Operating Conditions Tx transmit power / Rx receive sensitivity Data Rate Modulation BW=1M BW=2M BW=4M BW=8M Tx (dBm) +/-2 Rx (dBm) PHY rate (Mbps) Tx (dBm) +/-2 Rx (dBm) PHY rate (Mbps) Tx (dBm) +/-2 Rx (dBm) PHY rate (Mbps) Tx (dBm) +/-2 Rx (dBm) PHY rate (Mbps) MCS0 BPSK 25 -104 0.3 24.5 -102 0.7 22.5 -99 1.5 21.5 -95 3.3 MCS1 QPSK 25 -102 0.7 24.5 -100 1.4 22 -95 3.0 20.5 -92 6.5 MCS2 QPSK 25 -100 1.0 24.5 -97 2.2 22 -93 4.5 20.5 -90 9.8 MCS3 16-QAM 24.5 -97 1.3 24.5 -94 2.9 22 -90 6.0 20.5 -87 13 MCS4 16-QAM 23.5 -94 2.0 24 -91 4.3 22 -86 9.0 20.5 -84 20 MCS5 64-QAM 21 -90 2.7 22.5 -87 5.8 21 -82 12 20 -80 26 MCS6 64-QAM 21 -88 3.0 21 -85 6.5 20 -81 14 19 -78 29 MCS7 64-QAM 18.5 -87 3.3 19.5 -83 7.2 19 -79 15 18.5 -77 33 MCS8 256-QAM 17 -83 4.0 17.75 -79 8.9 18.5 -75 18 17.5 -73 39 MCS9 256-QAM 15.75 -80 4.4 -- -- -- 16.75 -74 20 16 -71 43 Note: The following transmit power levels are for IEEE compliance for 802.11ah. They do not consider any backoffs needed for regional spectrum compliance (e.g., FCC, CE, TELEC, NCC). TX power in edge channels will be limited by the restricted band edge in the regulatory regions. ◎ Operating Conditions Symbol Minimum Typical Maximum Unit 3.3V (VBAT=VBAT_TX=VDDIO=VDD_USB) 3.0 3.3 3.6 V TAMBIENT (Ambient temperature) -40 85 °C Tstg (Storage temperature) -40 125 °C Power Consumption ◎ Transmit Power Consumption No. Item 3.3V Band (MHz) Mode BW (MHz) RF Power (dBm) Transmit (mA) Max. Avg. 11ah US_915 MCS0 1 25 134.61 115.91 2 24.5 135.06 111.93 4 22.5 133.97 107.48 8 21.5 140.48 110.28 MCS9 1 15.75 109.47 89.18 MCS8 2 17.75 114.48 89.71 MCS9 4 16.75 119.58 92.2 MCS9 8 16 129.01 99.19 11ah EU_865.5 MCS0 1 14.75 106.6 92.08 MCS9 1 14.75 108.39 89.44 ◎ Receive Power Consumption No. Item 3.3V Band (MHz) Mode BW (MHz) Receive (mA) Max. Avg. 11ah US_915 MCS0 1 81.05 76.9 2 82.74 78.39 4 87.48 82.43 8 97.09 90.41 MCS9 1 83.29 76.68 MCS8 2 85.64 78.53 MCS9 4 91.04 82.93 MCS9 8 100.89 91.27 11ah EU_865.5 MCS0 1 84.27 78.28 MCS9 1 84.62 78.4 Mechanical PADs dimension Reflow Soldering Profile Handling and Storage The AHSM7394S class of modules are a moisture-sensitive device rated at Moisture Sensitive Level 3 (MSL3) per IPC/JEDEC J-STD-20. After opening the moisture-sealed storage bag, modules that will be subjected to reflow solder or other high-temperature processes mustbe: 1.Mounted to a circuit board within 168 hours at factory conditions. (≤30°Cand<60%RH) OR 2.Continuously stored per IPC/JEDEC J-STD-033 Modules that have been exposed to moisture and environmental conditions exceeding packaging and storage conditions MUST be baked before mounting according to IPC/JEDEC J-STD-033. Failure to meet packaging and storage conditions will result in irreparable damage to modules during solder reflow.