2N60G N-Channel Power MOSFET 600V 2A SOT-223 SMD Transistor

The 2N60G is a high-voltage N-Channel Power MOSFET designed for efficient switching applications in power supplies, LED drivers, battery chargers, and industrial control circuits. With a maximum drain-source voltage of 600V and a continuous drain current of 2A, this MOSFET delivers low switching losses, fast switching performance, and excellent reliability. Housed in a compact SOT-223 surface-mount package, the 2N60G is ideal for space-saving PCB designs and automated SMT assembly. Features N-Channel enhancement mode Power MOSFET. 600V drain-source voltage (VDSS). 2A continuous drain current. Low gate charge for fast switching. Low ON resistance for improved efficiency. High avalanche energy capability. Compact SOT-223 surface-mount package. Suitable for high-frequency switching. Excellent thermal performance. RoHS compliant. Applications Switch-mode power supplies (SMPS). LED driver circuits. AC-DC power converters. Battery chargers. Power management systems. Industrial automation equipment. DC-DC converter circuits. Home appliances. Electronic ballasts. General-purpose power switching. Specification Parameter Value Part Number 2N60G Device Type N-Channel Power MOSFET Package SOT-223 (SMD) Drain-Source Voltage (VDSS) 600V Continuous Drain Current (ID) 2A Gate-Source Voltage (VGS) ±30V RDS(on) Low On-Resistance Mounting Type Surface Mount (SMD) Operating Temperature -55°C to +150°C RoHS Compliance Yes