CN-T2T

Electron Transport Layer Material with Triazine Core High purity sublimed electron deficient semiconducting material in application of developing highly efficient exciplex OLEDs CN-T2T has a triazine core and three [1,1'-biphenyl]-3-carbonitrile side groups that attached to the core at 2,4-6-positions. Being electron deficient, CN-T2T is either used as electron transport layer material or as electron acceptor with electron donating materials such as BCzPh and Tris-PCz to form exciplexes for developing highly efficient exciplex OLEDs. Efficient deep-red phosphorescent OLED using a TCTA:CN-T2T exciplex system as the host and a red-emitting Ir(piq)2acac and a deep-red Ir(fliq)2acac double emitting layers achieved high peak efficiency of 19.1% (10.2 cd/A and 13.8 lm/W) and a power density of 5 mW/cm2 with low operating voltage of 5.2 eV. Yellow OLED device with exciplex cohost of MS-OC:CN-T2T and PO-01 as dopant achieved the highest efficiency among the tested yellow-emitting OLEDs, having a luminance efficiency of 80.0 cd/A, power efficiency of 113.0 lm/W, low turn-on voltage of 2.1 V, high maximum luminance of 142,464 cd/m2, and peak EQE of 27.1% [1] High purity sublimed material >99.0% Worldwide shipping Quick and reliable shipping Electron-transport layer (ETL) materials (in OLEDs) Efficient exciplex OLEDs Peak external quantum efficiency of 19.1% General Information CAS Number 1872292-95-9 Chemical Formula C42H24N6 Molecular Weight 612.68 g/mol Absorption* λmax 220, 270 nm Fluorescence λem 405 nm (film) HOMO/LUMO HOMO = 6.7 eV, LUMO = 2.7 eV Synonyms 3’,3”’,3””’-(1,3,5-triazine-2,4,6-triyl)tris[1,1′-biphenyl]-3-carbonitrile Classification or Family Triazine derivatives, Electron transport layer (ETL) materials, Exciplex, Exciplex cohost, Sublimed materials. Product Details Purity Sublimed* >99.0% (HPLC) Melting Point TGA: Td = 418° C. (5% weight loss) Appearance white to off-white crystals/powder * Sublimation is a technique used to obtain ultra pure-grade chemicals, see sublimed materials for OLED devices. Chemical Structure 3’,3”’,3””’-(1,3,5-triazine-2,4,6-triyl)tris[1,1′-biphenyl]-3-carbonitrile (CN-T2T) chemical structure, 1872292-95-9 Device Structure(s) Device structure ITO/HATCN (10 nm)/TAPC (35 nm)/BCzPh (10 nm)/BCzPh:CN-T2T (1:1)/ CN-T2T (40nm)/LiF (1 nm)/Al (100 nm) [2] Colour Green Max Current Efficiency 57.32 cd/A Max EQE 21.05% Max. Power Efficiency 68.47 lm W-1 Device structure ITO (150 nm)/HAT-CN (10 nm)/TAPC (40 nm)/TCTA (5 nm)/TCTA:CN-T2T:Ir(piq)2acac (46:46:8) (11 nm)/TCTA:CN-T2T:Ir(fliq)2acac (48.5:48.5:3) (25–14 nm)/CN-T2T (50 nm)/LiF (1.2 nm)/Al (120 nm) [3] Colour Red Max Current Efficiency 12.5 cd/A Max EQE 21.5% Max. Power Efficiency 17.8 lm W-1 *For chemical structure information, please refer to the cited references. Pricing Grade Product Code Quantity Price Sublimed (>99.0% purity) M2414A1 100 mg [[price gbp="210"]] Sublimed (>99.0% purity) M2414A1 250 mg [[price gbp="420"]] Sublimed (>99.0% purity) M2414A1 500 mg [[price gbp="670"]] Sublimed (>99.0% purity) M2414A1 1 g [[price gbp="1070"]] MSDS Documentation CN-T2T MSDS Sheet Literature and Reviews Highly efficient (EQE > 27%) Yellow OLEDs using spiro[fluorene-9,9′-phenanthren-10′-one]-carbazole-based donor–acceptor–donor host materials, Y. Lin et al., J. Mater. Chem. C, 11, 3101-3111 (2023); DOI: 10.1039/D2TC05296B. Balance the Carrier Mobility To Achieve High Performance Exciplex OLED Using a Triazine-Based Acceptor, W. Hung et al., ACS Appl. Mater. Interfaces, 8 (7), 4811–4818 (2016); DOI: 10.1021/acsami.5b11895. A Method to Realize Efficient Deep-Red Phosphorescent OLEDs with a Broad Spectral Profile and Low Operating Voltages, W. Chen et al., Materials, 14, 5723 (2021); DOI: 10.3390/ma14195723. Optimization of a triazine-based acceptor (CN-T2T) as the electron transport layer for highly efficient near-infrared perovskite light-emitting diodes, A. Kurniawan et al., J. Mater. Chem. C, 11, 11564-11570 (2023); DOI: 10.1039/D3TC01251D. Revealing the Cooperative Relationship between Spin, Energy, and Polarization Parameters toward Developing High-Efficiency Exciplex Light-Emitting Diodes, M. Wang et al., 31 (46), 1904114 (2019); DOI: 10.1002/adma.201904114.