hamamatsu Si photodiode S2386-18L For visible to near IR, general-purpose photometry

hamamatsu Si photodiode S2386-18L For visible to near IR, general-purpose photometry Download Datasheet: hamamatsu Si photodiode S2386-18L For visible to near IR, general-purpose photometry Features – High sensitivity in visible to near infrared range – Low dark current – High reliability – Superior linearity Specifications Photosensitive area 1.1 × 1.1 mm Package Metal Package category TO-18 with lens Cooling Non-cooled Reverse voltage (max.) 30 V Spectral response range 320 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm Photosensitivity (typ.) 0.6 A/W Dark current (max.) 2 pA Rise time (typ.) 0.4 μs Terminal capacitance (typ.) 140 pF Noise equivalent power (typ.) 6.8×10-16 W/Hz1/2 Measurement condition Typ. Ta=25 ℃, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, Noise equivalent power: VR=0 V, λ=λp, unless otherwise noted